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APT6035AVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT6035AVR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 403 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: TO3
 

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APT6035AVR Datasheet (PDF)

 ..1. Size:62K  apt
apt6035avr.pdf pdf_icon

APT6035AVR

APT6035AVR600V 16A 0.350POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower L

 7.1. Size:49K  apt
apt6035bn.pdf pdf_icon

APT6035AVR

DTO-247GAPT6035BN 600V 19.0A 0.35SPOWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT6035BN UNITVDSS Drain-Source Voltage600 VoltsID Continuous Drain Current @ TC = 25C19AmpsIDM Pulsed Drain Current 176VGS Gate-Source Voltage30 VoltsTotal Power Dissi

 7.2. Size:62K  apt
apt6035bvr.pdf pdf_icon

APT6035AVR

APT6035BVR600V 18A 0.350POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 7.3. Size:62K  apt
apt6035.pdf pdf_icon

APT6035AVR

APT6035AVR600V 16A 0.350POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower L

Otros transistores... APT6015LVR , APT6017WVR , APT6020LVR , APT6025BVR , APT6027HVR , APT6030BN , APT6030BVR , APT6032AVR , MMIS60R580P , APT6035BN , APT6035BVR , APT6035SVR , APT6037HVR , APT6040BN , APT6045BVR , APT6045CVR , APT6045SVR .

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