APT6035AVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT6035AVR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 403 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO3
Аналог (замена) для APT6035AVR
APT6035AVR Datasheet (PDF)
apt6035avr.pdf
APT6035AVR600V 16A 0.350POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower L
apt6035bn.pdf
DTO-247GAPT6035BN 600V 19.0A 0.35SPOWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT6035BN UNITVDSS Drain-Source Voltage600 VoltsID Continuous Drain Current @ TC = 25C19AmpsIDM Pulsed Drain Current 176VGS Gate-Source Voltage30 VoltsTotal Power Dissi
apt6035bvr.pdf
APT6035BVR600V 18A 0.350POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt6035.pdf
APT6035AVR600V 16A 0.350POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower L
apt6035bvfrg apt6035svfrg.pdf
APT6035BVFRAPT6035SVFR600V 18A 0.350BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR
apt6035bvfr.pdf
APT6035BVFRAPT6035SVFR600V 18A 0.350BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR
apt6035svr.pdf
APT6035SVR600V 18A 0.350POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt6035bvr.pdf
isc N-Channel MOSFET Transistor APT6035BVRFEATURESDrain Current I =18A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.35(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... APT6015LVR , APT6017WVR , APT6020LVR , APT6025BVR , APT6027HVR , APT6030BN , APT6030BVR , APT6032AVR , CEP83A3 , APT6035BN , APT6035BVR , APT6035SVR , APT6037HVR , APT6040BN , APT6045BVR , APT6045CVR , APT6045SVR .
Список транзисторов
Обновления
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