APT6035AVR Specs and Replacement

Type Designator: APT6035AVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 403 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO3

APT6035AVR substitution

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APT6035AVR datasheet

 ..1. Size:62K  apt
apt6035avr.pdf pdf_icon

APT6035AVR

APT6035AVR 600V 16A 0.350 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L... See More ⇒

 7.1. Size:49K  apt
apt6035bn.pdf pdf_icon

APT6035AVR

D TO-247 G APT6035BN 600V 19.0A 0.35 S POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT6035BN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 19 Amps IDM Pulsed Drain Current 1 76 VGS Gate-Source Voltage 30 Volts Total Power Dissi... See More ⇒

 7.2. Size:62K  apt
apt6035bvr.pdf pdf_icon

APT6035AVR

APT6035BVR 600V 18A 0.350 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 7.3. Size:62K  apt
apt6035.pdf pdf_icon

APT6035AVR

APT6035AVR 600V 16A 0.350 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L... See More ⇒

Detailed specifications: APT6015LVR, APT6017WVR, APT6020LVR, APT6025BVR, APT6027HVR, APT6030BN, APT6030BVR, APT6032AVR, 7N60, APT6035BN, APT6035BVR, APT6035SVR, APT6037HVR, APT6040BN, APT6045BVR, APT6045CVR, APT6045SVR

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