IPD30N03S2L-20 Todos los transistores

 

IPD30N03S2L-20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD30N03S2L-20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO252
 

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IPD30N03S2L-20 Datasheet (PDF)

 ..1. Size:152K  infineon
 ipd30n03s2l-20.pdf pdf_icon

IPD30N03S2L-20

IPD30N03S2L-20OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 20mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S2L

 2.1. Size:151K  infineon
 ipd30n03s2l-07.pdf pdf_icon

IPD30N03S2L-20

IPD30N03S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 6.7mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S2

 2.2. Size:151K  infineon
 ipd30n03s2l-10.pdf pdf_icon

IPD30N03S2L-20

IPD30N03S2L-10OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 10mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S2L

 2.3. Size:1828K  cn vbsemi
 ipd30n03s2l-10.pdf pdf_icon

IPD30N03S2L-20

IPD30N03S2L-10www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFET

MOSTRAR MÁS

Otros transistores... IPD14N06S2-80 , IPD15N06S2L-64 , IPD22N08S2L-50 , IPD25N06S2-40 , IPD25N06S4L-30 , IPD26N06S2L-35 , IPD30N03S2L-07 , IPD30N03S2L-10 , AON7408 , IPD30N03S4L-09 , IPD30N03S4L-14 , IPD30N06S2-15 , IPD30N06S2-23 , IPD30N06S2L-13 , IPD30N06S2L-23 , IPD30N06S4L-23 , IPD30N08S2-22 .

 

 
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