IPD30N03S2L-20 Specs and Replacement

Type Designator: IPD30N03S2L-20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO252

IPD30N03S2L-20 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD30N03S2L-20 datasheet

 ..1. Size:152K  infineon
 ipd30n03s2l-20.pdf pdf_icon

IPD30N03S2L-20

IPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 20 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2L... See More ⇒

 2.1. Size:151K  infineon
 ipd30n03s2l-07.pdf pdf_icon

IPD30N03S2L-20

IPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 6.7 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2... See More ⇒

 2.2. Size:151K  infineon
 ipd30n03s2l-10.pdf pdf_icon

IPD30N03S2L-20

IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 10 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2L... See More ⇒

 2.3. Size:1828K  cn vbsemi
 ipd30n03s2l-10.pdf pdf_icon

IPD30N03S2L-20

IPD30N03S2L-10 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ... See More ⇒

SHOW MORE

Detailed specifications: IPD14N06S2-80, IPD15N06S2L-64, IPD22N08S2L-50, IPD25N06S2-40, IPD25N06S4L-30, IPD26N06S2L-35, IPD30N03S2L-07, IPD30N03S2L-10, IRFP250N, IPD30N03S4L-09, IPD30N03S4L-14, IPD30N06S2-15, IPD30N06S2-23, IPD30N06S2L-13, IPD30N06S2L-23, IPD30N06S4L-23, IPD30N08S2-22

Keywords - IPD30N03S2L-20 MOSFET specs

 IPD30N03S2L-20 cross reference

 IPD30N03S2L-20 equivalent finder

 IPD30N03S2L-20 pdf lookup

 IPD30N03S2L-20 substitution

 IPD30N03S2L-20 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility