APT6035BN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6035BN  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 436 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO247

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APT6035BN datasheet

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 apt6035bn.pdf pdf_icon

APT6035BN

D TO-247 G APT6035BN 600V 19.0A 0.35 S POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT6035BN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 19 Amps IDM Pulsed Drain Current 1 76 VGS Gate-Source Voltage 30 Volts Total Power Dissi

 6.1. Size:62K  apt
 apt6035bvr.pdf pdf_icon

APT6035BN

APT6035BVR 600V 18A 0.350 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 6.2. Size:117K  apt
 apt6035bvfrg apt6035svfrg.pdf pdf_icon

APT6035BN

APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR

 6.3. Size:116K  apt
 apt6035bvfr.pdf pdf_icon

APT6035BN

APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR

MOSTRAR MÁS

Otros transistores... APT6017WVR, APT6020LVR, APT6025BVR, APT6027HVR, APT6030BN, APT6030BVR, APT6032AVR, APT6035AVR, IRFZ24N, APT6035BVR, APT6035SVR, APT6037HVR, APT6040BN, APT6045BVR, APT6045CVR, APT6045SVR, APT60M75JVR