APT6035BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6035BN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 310 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 19 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 23 nS
Conductancia de drenaje-sustrato (Cd): 436 pF
Resistencia drenaje-fuente RDS(on): 0.35 Ohm
Empaquetado / Estuche: TO247
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APT6035BN Datasheet (PDF)
1.1. apt6035bn.pdf 
Size:49K _apt
D TO-247 G APT6035BN 600V 19.0A 0.35Ω S POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT6035BN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 19 Amps IDM Pulsed Drain Current 1 76 VGS Gate-Source Voltage ±30 Volts Total Power Dissi
2.1. apt6035bvfrg apt6035svfrg.pdf Size:117K _update_mosfet
APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR
2.2. apt6035bvfr.pdf Size:116K _apt
APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR
2.3. apt6035bvr.pdf Size:62K _apt
APT6035BVR 600V 18A 0.350Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L
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