All MOSFET. APT6035BN Datasheet

 

APT6035BN MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT6035BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 87 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 436 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO247

 APT6035BN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT6035BN Datasheet (PDF)

 ..1. Size:49K  apt
 apt6035bn.pdf

APT6035BN APT6035BN

DTO-247GAPT6035BN 600V 19.0A 0.35SPOWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT6035BN UNITVDSS Drain-Source Voltage600 VoltsID Continuous Drain Current @ TC = 25C19AmpsIDM Pulsed Drain Current 176VGS Gate-Source Voltage30 VoltsTotal Power Dissi

 6.1. Size:62K  apt
 apt6035bvr.pdf

APT6035BN APT6035BN

APT6035BVR600V 18A 0.350POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 6.2. Size:117K  apt
 apt6035bvfrg apt6035svfrg.pdf

APT6035BN APT6035BN

APT6035BVFRAPT6035SVFR600V 18A 0.350BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR

 6.3. Size:116K  apt
 apt6035bvfr.pdf

APT6035BN APT6035BN

APT6035BVFRAPT6035SVFR600V 18A 0.350BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR

 6.4. Size:376K  inchange semiconductor
 apt6035bvr.pdf

APT6035BN APT6035BN

isc N-Channel MOSFET Transistor APT6035BVRFEATURESDrain Current I =18A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.35(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: APT6017WVR , APT6020LVR , APT6025BVR , APT6027HVR , APT6030BN , APT6030BVR , APT6032AVR , APT6035AVR , IRF730 , APT6035BVR , APT6035SVR , APT6037HVR , APT6040BN , APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR .

History: STP3NA80FI

 

 
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