IPD70N10S3-12 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD70N10S3-12

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0111 Ohm

Encapsulados: TO252

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IPD70N10S3-12 datasheet

 ..1. Size:175K  infineon
 ipd70n10s3-12 ipd70n10s3-12 ds 1 1.pdf pdf_icon

IPD70N10S3-12

IPD70N10S3-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 11.1 mW DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Max

 4.1. Size:176K  infineon
 ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf pdf_icon

IPD70N10S3-12

IPD70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 11.5 mW DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12

 7.1. Size:394K  infineon
 ipd70n12s3l-12.pdf pdf_icon

IPD70N10S3-12

IPD70N12S3L-12 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 11.5 mW ID 70 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested T

 7.2. Size:361K  infineon
 ipd70n12s3-11.pdf pdf_icon

IPD70N10S3-12

IPD70N12S3-11 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ty

MOSTRAR MÁS

Otros transistores... IPF105N03LG, IPD50N06S4-09, IPD50N06S4L-08, IPD50N06S4L-12, IPD50N10S3L-16, IPD50P03P4L-11, IPD70N03S4L-04, IPD70N04S3-07, STP80NF70, IPD70N10S3L-12, IPD80N04S3-06, IPD80P03P4L-07, IPD90N03S4L-02, IPD90N03S4L-03, IPD90N04S3-04, IPD90N04S3-H4, IPD90N04S4-04