IPD70N10S3-12 Specs and Replacement

Type Designator: IPD70N10S3-12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm

Package: TO252

IPD70N10S3-12 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD70N10S3-12 datasheet

 ..1. Size:175K  infineon
 ipd70n10s3-12 ipd70n10s3-12 ds 1 1.pdf pdf_icon

IPD70N10S3-12

IPD70N10S3-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 11.1 mW DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Max... See More ⇒

 4.1. Size:176K  infineon
 ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf pdf_icon

IPD70N10S3-12

IPD70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 11.5 mW DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12 ... See More ⇒

 7.1. Size:394K  infineon
 ipd70n12s3l-12.pdf pdf_icon

IPD70N10S3-12

IPD70N12S3L-12 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 11.5 mW ID 70 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested T... See More ⇒

 7.2. Size:361K  infineon
 ipd70n12s3-11.pdf pdf_icon

IPD70N10S3-12

IPD70N12S3-11 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ty... See More ⇒

SHOW MORE

Detailed specifications: IPF105N03LG, IPD50N06S4-09, IPD50N06S4L-08, IPD50N06S4L-12, IPD50N10S3L-16, IPD50P03P4L-11, IPD70N03S4L-04, IPD70N04S3-07, STP80NF70, IPD70N10S3L-12, IPD80N04S3-06, IPD80P03P4L-07, IPD90N03S4L-02, IPD90N03S4L-03, IPD90N04S3-04, IPD90N04S3-H4, IPD90N04S4-04

Keywords - IPD70N10S3-12 MOSFET specs

 IPD70N10S3-12 cross reference

 IPD70N10S3-12 equivalent finder

 IPD70N10S3-12 pdf lookup

 IPD70N10S3-12 substitution

 IPD70N10S3-12 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility