IPD031N06L3G Todos los transistores

pe % # ! % (>.;?6?@ %>E Features D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 1 m D n) m x R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD 1 D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R /6CJ =@H @? C6D DE2?46 , D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D Ty... See More ⇒

isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3 FEATURES Static drain-source on-resistance RDS(on) 3.1m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 6... See More ⇒

pe % # ! %' # ! % (>.;?6?@ %>E Features V D R !3DE DH;E5 ;@9 (* .! / 8AC .(+. R 1 m D n) m x R * BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD I D 1) R , F3>;8;76 355AC6;@9 EA % 8AC E3C97E 3BB>;53E;A@D R ) 5 3@@7> >A9;5 >7G7> R I57>>7@E 93E7 5 3C97 I R BCA6F5E !* ( D n) R 07CJ >AH A@ C7D;DE3@57 R D n) R G3>3@5 7 C3E76 R +4 8C77 B>3E;@9 - A#. 5A?B>;3@E R #... See More ⇒

pe % # ! %' # ! % (>.;?6?@ %>E Features V D R !3DE DH;E5 ;@9 (* .! / 8AC .(+. R 1 m D n) m x R * BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD I D 1) R , F3>;8;76 355AC6;@9 EA % 8AC E3C97E 3BB>;53E;A@D R ) 5 3@@7> >A9;5 >7G7> R I57>>7@E 93E7 5 3C97 I R BCA6F5E !* ( D n) R 07CJ >AH A@ C7D;DE3@57 R D n) R G3>3@5 7 C3E76 R +4 8C77 B>3E;@9 - A#. 5A?B>;3@E R #... See More ⇒

isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L FEATURES Static drain-source on-resistance RDS(on) 3.1m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V ... See More ⇒