IPD031N06L3G Todos los transistores

 

IPD031N06L3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD031N06L3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 167 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 100 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 59 nC

Resistencia drenaje-fuente RDS(on): 0.0031 Ohm

Empaquetado / Estuche: DPAK_TO252

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IPD031N06L3G Datasheet (PDF)

1.1. ipd031n06l3 rev2.0.pdf Size:445K _infineon

IPD031N06L3G
IPD031N06L3G

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2.1. ipd031n03l.pdf Size:668K _infineon

IPD031N06L3G
IPD031N06L3G

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 5.1. ipd034n06n3 rev2.0.pdf Size:436K _infineon

IPD031N06L3G
IPD031N06L3G

pe # ! ! (TM) #:A0< &<,9=4=>:< #<:/?.> %?88,3I CG9D389>7 1>4 CI>3 B53 4 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC 1 D Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) Q .5BI B5C9CD1>35 + D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?>C

5.2. ipd03n03lag.pdf Size:400K _infineon

IPD031N06L3G
IPD031N06L3G

IPD03N03LA G IPS03N03LA G OptiMOS®2 Power-Transistor Product Summary Features V 25 V DS • Ideal for high-frequency dc/dc converters R (SMD Version) 3.2 mΩ DS(on),max • Qualified according to JEDEC1) for target applications I 90 A D • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Superior thermal resistance • 175 °C operating temperatu

 5.3. ipd038n04n rev1.0.pdf Size:423K _infineon

IPD031N06L3G
IPD031N06L3G

pe $ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 4 D P 1BC BF9C389>7 &( , - 6?A ,&), m D n) m x P ( @C9=9I54 C538>?E5AC5AB D 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?>B P ' 381>>5< >?A=1< <5E5< P G35<<5>C 71C5 381A75 G @A?4D3C ( & D n) P .5AH A5B9BC1>35 D n) P E1<1>385 C5BC54 P )2 6A55 @<1C9>7 + ?", 3?=@<91>C Type #) ' ' ! Package

5.4. ipd036n04l rev1.0.pdf Size:429K _infineon

IPD031N06L3G
IPD031N06L3G

pe % # ! % (>.;?6?@<> %><1A0@ 'A::.>E Features V 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*- R m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC I D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C Q ( 492??6= =@8:4 =6F6= Q H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 R D n) Q F2=2?496 D6CD65 Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?D Type #* ( & !

 5.5. ipd035n06l3 rev2.3.pdf Size:444K _infineon

IPD031N06L3G
IPD031N06L3G

pe % # ! % (>.;?6?@<> %><1A0@ 'A::.>E Features D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 m D n) m x R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R /6CJ =@H @? C6D:DE2?46 , D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D Type #* ( &

5.6. ipd038n06n3 rev1.02.pdf Size:611K _infineon

IPD031N06L3G
IPD031N06L3G

Type # ! ! #:A0< &<,9=4=>:< #<:/?.> %?88,C 71C5 381A75 G R @A?4D3C ( & DS(on) R .8 m DS(on) max P .5AH A5B9BC1>35 R DS(on) I 90 A D P ' 381>>5< >?A=1< <5E5< @A5E9?DB 5>79>55A9>7 P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), B1=@<5 3?45 IPD04xN06N P E1<1>385 A1C54 P .5AH A5B9BC1>35 R DS(on) 1) P * D1<96954 133?A49>7 C?

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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