IPD031N06L3G Specs and Replacement
Type Designator: IPD031N06L3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 1700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO252
IPD031N06L3G substitution
- MOSFET ⓘ Cross-Reference Search
IPD031N06L3G datasheet
ipd031n06l3.pdf
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ipd031n06l3.pdf
isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3 FEATURES Static drain-source on-resistance RDS(on) 3.1m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 6... See More ⇒
ipd031n03l.pdf
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ipd031n03lg ips031n03lg.pdf
pe % # ! %' # ! % (>.;?6?@ %>E Features V D R !3DE DH;E5 ;@9 (* .! / 8AC .(+. R 1 m D n) m x R * BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD I D 1) R , F3>;8;76 355AC6;@9 EA % 8AC E3C97E 3BB>;53E;A@D R ) 5 3@@7> >A9;5 >7G7> R I57>>7@E 93E7 5 3C97 I R BCA6F5E !* ( D n) R 07CJ >AH A@ C7D;DE3@57 R D n) R G3>3@5 7 C3E76 R +4 8C77 B>3E;@9 - A#. 5A?B>;3@E R #... See More ⇒
Detailed specifications: IPD90N06S4-05, IPD90N06S4-07, IPD90N06S4L-03, IPD90N06S4L-05, IPD90N06S4L-06, IPD90P03P4-04, IPD90P03P4L-04, IPD031N03LG, IRFZ24N, IPD034N06N3G, IPD035N06L3G, IPD036N04LG, IPD038N04NG, IPD038N06N3G, IPD040N03LG, IPD042P03L3G, IPD048N06L3G
Keywords - IPD031N06L3G MOSFET specs
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