IPD031N06L3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD031N06L3G
Marking Code: 031N06L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 167
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 59
nC
trⓘ - Rise Time: 78
nS
Cossⓘ -
Output Capacitance: 1700
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031
Ohm
Package:
TO252
IPD031N06L3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD031N06L3G
Datasheet (PDF)
3.1. Size:445K infineon
ipd031n06l3.pdf 
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3.2. Size:242K inchange semiconductor
ipd031n06l3.pdf
isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3FEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6
6.1. Size:668K infineon
ipd031n03l.pdf
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6.2. Size:671K infineon
ipd031n03lg ips031n03lg.pdf
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6.3. Size:241K inchange semiconductor
ipd031n03l.pdf
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03LFEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV
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