IPD060N03LG Todos los transistores

 ..1. Size:523K  infineon
 ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo

 ..2. Size:1021K  infineon
 ipd060n03lg .pdf

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 ..3. Size:1007K  infineon
 ipd060n03lg.pdf

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 4.1. Size:634K  infineon
 ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

 4.2. Size:521K  infineon
 ipd060n03l.pdf

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo

 4.3. Size:241K  inchange semiconductor
 ipd060n03l.pdf

isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L FEATURES Static drain-source on-resistance RDS(on) 6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga