IPD060N03LG Specs and Replacement

Type Designator: IPD060N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

IPD060N03LG substitution

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IPD060N03LG datasheet

 ..1. Size:523K  infineon
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IPD060N03LG

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo... See More ⇒

 ..2. Size:1021K  infineon
ipd060n03lg .pdf pdf_icon

IPD060N03LG

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 ..3. Size:1007K  infineon
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IPD060N03LG

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 4.1. Size:634K  infineon
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf pdf_icon

IPD060N03LG

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low... See More ⇒

Detailed specifications: IPD038N04NG, IPD038N06N3G, IPD040N03LG, IPD042P03L3G, IPD048N06L3G, IPD050N03LG, IPD053N06N3G, IPD053N08N3G, IRF830, IPD068N10N3G, IPD068P03L3G, IPD075N03LG, IPD079N06L3G, IPD082N10N3G, IPD088N04LG, IPD088N06N3G, IPD090N03LG

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