All MOSFET. IPD060N03LG Datasheet

 

IPD060N03LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD060N03LG
   Marking Code: 060N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.3 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO252

 IPD060N03LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD060N03LG Datasheet (PDF)

 ..1. Size:523K  infineon
 ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf

IPD060N03LG IPD060N03LG

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo

 ..2. Size:1021K  infineon
 ipd060n03lg .pdf

IPD060N03LG IPD060N03LG

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 ..3. Size:1007K  infineon
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 4.1. Size:634K  infineon
 ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf

IPD060N03LG IPD060N03LG

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

 4.2. Size:521K  infineon
 ipd060n03l.pdf

IPD060N03LG IPD060N03LG

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo

 4.3. Size:241K  inchange semiconductor
 ipd060n03l.pdf

IPD060N03LG IPD060N03LG

isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03LFEATURESStatic drain-source on-resistance:RDS(on)6mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Ga

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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