IPD50N04S4L-08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD50N04S4L-08
Código: 4N04L08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 46 W
Tensión drenaje-fuente (Vds): 40 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 50 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.2 V
Carga de compuerta (Qg): 23 nC
Tiempo de elevación (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 350 pF
Resistencia drenaje-fuente RDS(on): 0.0073 Ohm
Empaquetado / Estuche: TO252
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IPD50N04S4L-08 Datasheet (PDF)
1.1. ipd50n04s4-08 ds 1 0.pdf 
Size:154K _infineon
IPD50N04S4-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 7.9 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings,
1.2. ipd50n04s3-09 ds 1 1.pdf Size:182K _infineon
IPD50N04S3-09 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 9 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maxim
1.3. ipd50n04s3-08 ds 1 0.pdf Size:184K _infineon
IPD50N04S3-08 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 7.5 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max
1.4. ipd50n04s4-10 ds 1 0.pdf Size:153K _infineon
IPD50N04S4-10 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 9.3 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,
1.5. ipd50n04s4l-08 ds 1 0.pdf Size:153K _infineon
IPD50N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 7.3 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating
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