IPD50N04S4L-08 Todos los transistores

 

IPD50N04S4L-08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD50N04S4L-08

Código: 4N04L08

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 46 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.2 V

Carga de compuerta (Qg): 23 nC

Tiempo de elevación (tr): 8 nS

Conductancia de drenaje-sustrato (Cd): 350 pF

Resistencia drenaje-fuente RDS(on): 0.0073 Ohm

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de MOSFET IPD50N04S4L-08

 

IPD50N04S4L-08 Datasheet (PDF)

1.1. ipd50n04s4-08 ds 1 0.pdf Size:154K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S4-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 7.9 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings,

1.2. ipd50n04s3-09 ds 1 1.pdf Size:182K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S3-09 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 9 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maxim

 1.3. ipd50n04s3-08 ds 1 0.pdf Size:184K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S3-08 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 7.5 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max

1.4. ipd50n04s4-10 ds 1 0.pdf Size:153K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S4-10 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 9.3 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,

 1.5. ipd50n04s4l-08 ds 1 0.pdf Size:153K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 7.3 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IPD50N04S4L-08
  IPD50N04S4L-08
  IPD50N04S4L-08
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SVF740F | SVF740T | SUV90N06-05 | SSP60N06 | SSP60N05 | SI4914DY | ME4953 | JCS8N60F | JCS8N60C | JCS8N60B | JCS8N60S | HY3210PM | HY3210PS | HY3210B | HY3210M |

 

 

 
Back to Top