IPD50N04S4L-08 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD50N04S4L-08
Marking Code: 4N04L08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
Package: TO252
IPD50N04S4L-08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD50N04S4L-08 Datasheet (PDF)
ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf
IPD50N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N04L08Maximum rating
ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf
IPD50N04S4-10OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 9.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-10 PG-TO252-3-313 4N0410Maximum ratings,
ipd50n04s4-08 ds 1 0.pdf
IPD50N04S4-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N0408Maximum ratings,
ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf
IPD50N04S3-08OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 7.5mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S3-08 PG-TO252-3-11 3N0408Max
ipd50n04s3-09 ipd50n04s3-09 ds 1 1.pdf
IPD50N04S3-09OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S3-09 PG-TO252-3-11 3N0409Maxim
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918