All MOSFET. IPD50N04S4L-08 Datasheet

 

IPD50N04S4L-08 Datasheet and Replacement


   Type Designator: IPD50N04S4L-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
   Package: TO252
 

 IPD50N04S4L-08 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPD50N04S4L-08 Datasheet (PDF)

 ..1. Size:153K  infineon
 ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf pdf_icon

IPD50N04S4L-08

IPD50N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N04L08Maximum rating

 4.1. Size:153K  infineon
 ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf pdf_icon

IPD50N04S4L-08

IPD50N04S4-10OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 9.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-10 PG-TO252-3-313 4N0410Maximum ratings,

 4.2. Size:154K  infineon
 ipd50n04s4-08 ds 1 0.pdf pdf_icon

IPD50N04S4L-08

IPD50N04S4-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N0408Maximum ratings,

 5.1. Size:184K  infineon
 ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf pdf_icon

IPD50N04S4L-08

IPD50N04S3-08OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 7.5mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S3-08 PG-TO252-3-11 3N0408Max

SHOW MORE

Datasheet: IPD25CN10NG , IPD320N20N3G , IPD33CN10NG , IPD350N06LG , IPD400N06NG , IPD49CN10NG , IPD50N04S4-08 , IPD50N04S4-10 , IRFP250N , IPD50P04P4L-11 , IPD50R399CP , IPD50R520CP , IPD530N15N3G , IPD600N25N3G , IPD60R1K4C6 , IPD60R2K0C6 , IPD60R380C6 .

History: AP6679BGP | BSC040N10NS5 | OSG60R360FSF | BUK9Y07-30B | RTR030N05 | STL4N10F7 | BSB044N08NN3G

Keywords - IPD50N04S4L-08 MOSFET datasheet

 IPD50N04S4L-08 cross reference
 IPD50N04S4L-08 equivalent finder
 IPD50N04S4L-08 lookup
 IPD50N04S4L-08 substitution
 IPD50N04S4L-08 replacement

 

 
Back to Top

 


 
.