Справочник MOSFET. IPD50N04S4L-08

 

IPD50N04S4L-08 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPD50N04S4L-08

Маркировка: 4N04L08

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 46 W

Предельно допустимое напряжение сток-исток (Uds): 40 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.2 V

Максимально допустимый постоянный ток стока (Id): 50 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 23 nC

Время нарастания (tr): 8 ns

Выходная емкость (Cd): 350 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0073 Ohm

Тип корпуса: TO252

Аналог (замена) для IPD50N04S4L-08

 

 

IPD50N04S4L-08 Datasheet (PDF)

1.1. ipd50n04s4-08 ds 1 0.pdf Size:154K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S4-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 7.9 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings,

1.2. ipd50n04s3-09 ds 1 1.pdf Size:182K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S3-09 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 9 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maxim

 1.3. ipd50n04s3-08 ds 1 0.pdf Size:184K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S3-08 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 7.5 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max

1.4. ipd50n04s4-10 ds 1 0.pdf Size:153K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S4-10 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 9.3 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,

 1.5. ipd50n04s4l-08 ds 1 0.pdf Size:153K _infineon

IPD50N04S4L-08
IPD50N04S4L-08

IPD50N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 7.3 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating

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