IPD60R450E6 Todos los transistores

 

IPD60R450E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD60R450E6

Código: 6R450E6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 74 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 9.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 3.5 V

Carga de compuerta (Qg): 28 nC

Tiempo de elevación (tr): 9 nS

Conductancia de drenaje-sustrato (Cd): 41 pF

Resistencia drenaje-fuente RDS(on): 0.45 Ohm

Empaquetado / Estuche: TO252

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IPD60R450E6 Datasheet (PDF)

0.1. ipd60r450e6.pdf Size:2131K _infineon

IPD60R450E6
IPD60R450E6

MOSFET+ =L9D - PA

0.2. ipd60r450e6.pdf Size:242K _inchange_semiconductor

IPD60R450E6
IPD60R450E6

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6FEATURESStatic drain-source on-resistance:RDS(on)0.45Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

 7.1. ipa60r460ce ipd60r460ce.pdf Size:1709K _infineon

IPD60R450E6
IPD60R450E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R460CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R460CE, IPA60R460CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

7.2. ipd60r400ce ips60r400ce ipa60r400ce.pdf Size:1345K _infineon

IPD60R450E6
IPD60R450E6

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

 7.3. ipa60r400ce ipd60r400ce.pdf Size:1706K _infineon

IPD60R450E6
IPD60R450E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R400CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R400CE, IPA60R400CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

7.4. ipd60r460ce.pdf Size:242K _inchange_semiconductor

IPD60R450E6
IPD60R450E6

isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CEFEATURESStatic drain-source on-resistance:RDS(on)0.46Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

 7.5. ipd60r400ce.pdf Size:242K _inchange_semiconductor

IPD60R450E6
IPD60R450E6

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CEFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

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