IPD60R450E6 - Даташиты. Аналоги. Основные параметры

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R450E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS E6 Pwer Transistr IPD60R450E6, IPP60R450E6IPA60R450E61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S )

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6FEATURESStatic drain-source on-resistance:RDS(on)0.45Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R400CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R400CE, IPA60R400CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

IPD60R460CE, IPA60R460CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R460CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R460CE, IPA60R460CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CEFEATURESStatic drain-source on-resistance:RDS(on)0.46Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSS

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CEFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV