All MOSFET. IPD60R450E6 Datasheet

 

IPD60R450E6 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD60R450E6

Marking Code: 6R450E6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 9.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 28 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 41 pF

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO252

IPD60R450E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R450E6 Datasheet (PDF)

0.1. ipd60r450e6.pdf Size:2131K _infineon

IPD60R450E6
IPD60R450E6

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0.2. ipd60r450e6.pdf Size:242K _inchange_semiconductor

IPD60R450E6
IPD60R450E6

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.45Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

 7.1. ipa60r460ce ipd60r460ce.pdf Size:1709K _infineon

IPD60R450E6
IPD60R450E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R460CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R460CE, IPA60R460CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

7.2. ipd60r400ce ips60r400ce ipa60r400ce.pdf Size:1345K _infineon

IPD60R450E6
IPD60R450E6

IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOSª CE Power Transistor tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica

 7.3. ipa60r400ce ipd60r400ce.pdf Size:1706K _infineon

IPD60R450E6
IPD60R450E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R400CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R400CE, IPA60R400CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

7.4. ipd60r460ce.pdf Size:242K _inchange_semiconductor

IPD60R450E6
IPD60R450E6

isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.46Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

 7.5. ipd60r400ce.pdf Size:242K _inchange_semiconductor

IPD60R450E6
IPD60R450E6

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

Datasheet: IPD50R520CP , IPD530N15N3G , IPD600N25N3G , IPD60R1K4C6 , IPD60R2K0C6 , IPD60R380C6 , IPD60R385CP , IPD60R3K3C6 , IRFZ44V , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , IPD640N06LG .

 

 
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