IPD60R450E6 PDF and Equivalents Search

 

IPD60R450E6 Specs and Replacement

Type Designator: IPD60R450E6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO252

IPD60R450E6 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD60R450E6 datasheet

 ..1. Size:2131K  infineon
ipd60r450e6.pdf pdf_icon

IPD60R450E6

MOSFET + =L9D - PA... See More ⇒

 ..2. Size:1210K  infineon
ipd60r450e6 ipp60r450e6 ipa60r450e6.pdf pdf_icon

IPD60R450E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R450E6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS E6 P wer Transist r IPD60R450E6, IPP60R450E6 IPA60R450E6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S )... See More ⇒

 ..3. Size:242K  inchange semiconductor
ipd60r450e6.pdf pdf_icon

IPD60R450E6

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6 FEATURES Static drain-source on-resistance RDS(on) 0.45 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS ... See More ⇒

 7.1. Size:1706K  infineon
ipa60r400ce ipd60r400ce.pdf pdf_icon

IPD60R450E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R400CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R400CE, IPA60R400CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

Detailed specifications: IPD50R520CP , IPD530N15N3G , IPD600N25N3G , IPD60R1K4C6 , IPD60R2K0C6 , IPD60R380C6 , IPD60R385CP , IPD60R3K3C6 , 2N7002 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , IPD640N06LG .

Keywords - IPD60R450E6 MOSFET specs

 IPD60R450E6 cross reference
 IPD60R450E6 equivalent finder
 IPD60R450E6 pdf lookup
 IPD60R450E6 substitution
 IPD60R450E6 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.