IPD65R380E6 Todos los transistores

 

IPD65R380E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD65R380E6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 41 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

IPD65R380E6 Datasheet (PDF)

 ..1. Size:1960K  infineon
ipd65r380e6 ipp65r380e6 ipa65r380e6.pdf pdf_icon

IPD65R380E6

MOSFET+ =L9D - PA

 ..2. Size:1898K  infineon
ipd65r380e6.pdf pdf_icon

IPD65R380E6

MOSFET+ =L9D - PA

 ..3. Size:243K  inchange semiconductor
ipd65r380e6.pdf pdf_icon

IPD65R380E6

isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6FEATURESStatic drain-source on-resistance:RDS(on)0.38Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 5.1. Size:1946K  infineon
ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf pdf_icon

IPD65R380E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Rev. 2.2, 2013-07-31Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MO

Otros transistores... IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , IPD640N06LG , IPD64CN10NG , IPD65R380C6 , AON7506 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 .

History: IXTP50N28T | 3SK249

 

 
Back to Top

 


History: IXTP50N28T | 3SK249

IPD65R380E6
  IPD65R380E6
  IPD65R380E6
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC

 

 

 
Back to Top

 

Popular searches

a608 transistor | c536 transistor | 2n706 | 2n388 | 2n3645 | 2n1307 | 2sa747 | a1941

 


 
.