Справочник MOSFET. IPD65R380E6

 

IPD65R380E6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPD65R380E6

Маркировка: 65E6380

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 83 W

Предельно допустимое напряжение сток-исток (Uds): 650 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3.5 V

Максимально допустимый постоянный ток стока (Id): 10.6 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 39 nC

Время нарастания (tr): 7 ns

Выходная емкость (Cd): 41 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.38 Ohm

Тип корпуса: TO252

Аналог (замена) для IPD65R380E6

 

 

IPD65R380E6 Datasheet (PDF)

1.1. ipd65r380c62.1.pdf Size:1905K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accord

1.2. ipd65r380e6.pdf Size:1898K _infineon

IPD65R380E6
IPD65R380E6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA65R380E6 1 Descriptiסn !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF

 4.1. ipd65r400ce ips65r400ce.pdf Size:1094K _infineon

IPD65R380E6
IPD65R380E6

IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOSª CE Power Transistor tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting de

4.2. ipd65r950cfd.pdf Size:1144K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CFD2 650V 650V CoolMOS™ CFD2 Power Transistor IPD65R950CFD Data Sheet Rev. 2.0 Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS™ CFD2 Power Transistor IPD65R950CFD DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) prin

 4.3. ipd65r1k5ce.pdf Size:940K _infineon

IPD65R380E6
IPD65R380E6

IPD65R1K5CE MOSFET DPAK 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

4.4. ipd65r420cfd ipd65r420cfda.pdf Size:1304K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS™ CFDA Power Transistor IPD65R420CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS™ CFDA Power Transistor IPD65R420CFDA DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered

 4.5. ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf Size:2092K _infineon

IPD65R380E6
IPD65R380E6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F>;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descriptiסn !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ4.6. ipd65r250e6.pdf Size:1701K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 650V 650V CoolMOS™ E6 Power Transistor IPD65R250E6 Data Sheet Rev. 2.2 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor IPD65R250E6 DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pi

4.7. ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf Size:4455K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CFD2 650V 650V CoolMOS™ CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS™ CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D²PAK TO-220 1 Description CoolMOS™ is a revolutionary technology for hi

4.8. ipd65r600e6.pdf Size:1867K _infineon

IPD65R380E6
IPD65R380E6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA65R600E6 1 Descriptiסn !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF

4.9. ipd65r1k4cfd.pdf Size:1133K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CFD2 650V 650V CoolMOS™ CFD2 Power Transistor IPD65R1K4CFD Data Sheet Rev. 2.0 Rev. 2.1, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS™ CFD2 Power Transistor IPD65R1K4CFD DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjuncti

4.10. ipd65r1k4c6.pdf Size:1724K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPD65R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPD65R1K4C6 DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p

4.11. ipd65r225c7.pdf Size:1677K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPD65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS™ C7 Power Transistor IPD65R225C7 DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p

4.12. ipd65r250c6.pdf Size:1206K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPD65R250C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPD65R250C6 DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee

4.13. ipd65r660cfda.pdf Size:1385K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS™ CFDA Power Transistor IPD65R660CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS™ CFDA Power Transistor IPD65R660CFDA DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered

4.14. ipd65r190c7.pdf Size:1830K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPD65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS™ C7 Power Transistor IPD65R190C7 DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p

4.15. ipd65r950c6.pdf Size:1734K _infineon

IPD65R380E6
IPD65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPD65R950C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPD65R950C6 DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and

4.16. ipd65r600c6.pdf Size:2092K _infineon

IPD65R380E6
IPD65R380E6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F>;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descriptiסn !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ4.17. ipd65r1k0ce.pdf Size:963K _infineon

IPD65R380E6
IPD65R380E6

IPD65R1K0CE MOSFET DPAK 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

4.18. ipa65r650ce ipd65r650ce.pdf Size:1158K _infineon

IPD65R380E6
IPD65R380E6

IPA65R650CE, IPD65R650CE MOSFET TO-220 FP DPAK 650V CoolMOS™ CE Power Transistor tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighti

Другие MOSFET... IPD60R600C6 , IPD60R600CP , IPD60R600E6 , IPD60R750E6 , IPD60R950C6 , IPD640N06LG , IPD64CN10NG , IPD65R380C6 , CEP83A3 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 .

 

 
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