IPD65R380E6 MOSFET Datasheet: N-Ch, 650V, 10.6A. Full specification with pinout and replacement list

IPD65R380E6 Specs and Replacement

Type Designator: IPD65R380E6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO252

IPD65R380E6 substitution

- MOSFET ⓘ Cross-Reference Search

IPD65R380E6 datasheet

..1. Size:1960K infineon
ipd65r380e6 ipp65r380e6 ipa65r380e6.pdf pdf_icon

MOSFET + =L9D - PA... See More ⇒

..2. Size:1898K infineon
ipd65r380e6.pdf pdf_icon

MOSFET + =L9D - PA... See More ⇒

..3. Size:243K inchange semiconductor
ipd65r380e6.pdf pdf_icon

isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

5.1. Size:1946K infineon
ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Rev. 2.2, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MO... See More ⇒