IPD90R1K2C3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD90R1K2C3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de IPD90R1K2C3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPD90R1K2C3 datasheet

 ..1. Size:297K  infineon
ipd90r1k2c3.pdf pdf_icon

IPD90R1K2C3

IPD90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252 Ultra low gate charge CoolMOS 900V

 ..2. Size:243K  inchange semiconductor
ipd90r1k2c3.pdf pdf_icon

IPD90R1K2C3

isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 FEATURES Static drain-source on-resistance RDS(on) 1.2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 9.1. Size:163K  infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90R1K2C3

IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a

 9.2. Size:163K  infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90R1K2C3

IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P

Otros transistores... IPD70P04P4-09, IPD75N04S4-06, IPD78CN10NG, IPD800N06NG, IPD90N04S4-02, IPD90N04S4-03, IPD90N04S4-05, IPD90P04P4-05, IRFP450, IPG20N04S4-08, IPG20N04S4-09, IPG20N04S4-12, IPG20N04S4L-07, IPG20N04S4L-08, IPG20N04S4L-11, IPG20N06S2L-35, IPG20N06S2L-50