All MOSFET. IPD90R1K2C3 Datasheet

 

IPD90R1K2C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD90R1K2C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 5.1 A

Total Gate Charge (Qg): 28 nC

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: DPAK, TO252

IPD90R1K2C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD90R1K2C3 Datasheet (PDF)

1.1. ipd90r1k2c3.pdf Size:297K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90R1K2C3 CoolMOS™ Power Transistor Product Summary Features V @ T =25°C 900 V DS J • Lowest figure-of-merit RON x Qg R @T =25°C 1.2 Ω DS(on),max J • Extreme dv/dt rated Q 28 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO252 • Ultra low gate charge CoolMOS™ 900V

1.2. ipd90r1k2c3.pdf Size:243K _inchange_semiconductor

IPD90R1K2C3
IPD90R1K2C3

isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 5.1. ipd90n06s4-05 ds 10.pdf Size:163K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N06S4-05 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 5.1 mΩ DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon Type Package Marking IPD90N04S6-05 PG-TO252-3-11

5.2. ipd90n06s4-07 ds 10.pdf Size:163K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N06S4-07 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 6.9 mΩ DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11

 5.3. ipd90p03p4-04 ds 10.pdf Size:165K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90P03P4-04 OptiMOS®-P2 Power-Transistor Product Summary V -30 V DS R 4.5 mΩ DS(on) I -90 A D Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90P03P4-04 PG-TO252-3-11 4P0304 Maxim

5.4. ipd90n04s4-02 ds 1 0.pdf Size:152K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N04S4-02 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 2.4 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S4-02 PG-TO252-3-313 4N0402 Maximum ratings,

 5.5. ipd90n06s4l-06 ds 10.pdf Size:163K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N06S4L-06 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 6.3 mΩ DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon Type Package Marking IPD90N06S4L-06 P

5.6. ipd90n03s4l-02 ds 3 0.pdf Size:160K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N03S4L-02 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 2.2 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD90N03S4L-02

5.7. ipd90p04p4-05 ds 10.pdf Size:129K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90P04P4-05 OptiMOS®-P2 Power-Transistor Product Summary V -40 V DS R 4.7 mΩ DS(on) I -90 A D Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90P04P4-05 PG-TO252-3-313 4P0405 Maxi

5.8. ipd90n06s4l-03 ds 10.pdf Size:163K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N06S4L-03 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 3.5 mΩ DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon Type Package Marking IPD90N06S4L-03 P

5.9. ipd90n06s4l-05 ds 10.pdf Size:163K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N06S4L-05 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 4.6 mΩ DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon Type Package Marking IPD90N06S4L-05 PG-TO252-3-1

5.10. ipd90n06s4-04 ds 12.pdf Size:163K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N06S4-04 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 3.8 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a

5.11. ipd90n04s3-04 ds 1 0.pdf Size:184K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N04S3-04 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 3.6 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S3-04 PG-TO252-3-11 QN0404 Max

5.12. ipd90n04s4-04 ds 1 0.pdf Size:154K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N04S4-04 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 4.1 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S4-04 PG-TO252-3-313 4N0404 Maximum ratings,

5.13. ipd90n04s4-05 ds 1 0.pdf Size:154K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N04S4-05 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 5.2 mΩ DS(on),max I 86 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S4-05 PG-TO252-3-313 4N0405 Maximum ratings,

5.14. ipd90n04s4l-04 ds 1 0.pdf Size:154K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N04S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 3.8 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S4L-04 PG-TO252-3-313 4N04L04 Maximum ratin

5.15. ipd90p03p4l-04 ds 10.pdf Size:164K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90P03P4L-04 OptiMOS®-P2 Power-Transistor Product Summary V -30 V DS R 4.1 mΩ DS(on) I -90 A D Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type Package Mark

5.16. ipd90n03s4l-03 ds.pdf Size:157K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N03S4L-03 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 3.3 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N03S4L-03 PG-TO252-3-11 4N03L03

5.17. ipd90n04s4-03 ds 1 0.pdf Size:152K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N04S4-03 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 3.2 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S4-03 PG-TO252-3-313 4N0403 Maximum ratings,

5.18. ipd90n04s3-h4.pdf Size:162K _infineon

IPD90R1K2C3
IPD90R1K2C3

IPD90N04S3-H4 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 4.3 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S3-H4 PG-TO252-3-11 QN04H4 Max

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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