All MOSFET. IPD90R1K2C3 Datasheet

 

IPD90R1K2C3 Datasheet and Replacement


   Type Designator: IPD90R1K2C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252
 

 IPD90R1K2C3 substitution

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IPD90R1K2C3 Datasheet (PDF)

 ..1. Size:297K  infineon
ipd90r1k2c3.pdf pdf_icon

IPD90R1K2C3

IPD90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO252 Ultra low gate chargeCoolMOS 900V

 ..2. Size:243K  inchange semiconductor
ipd90r1k2c3.pdf pdf_icon

IPD90R1K2C3

isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3FEATURESStatic drain-source on-resistance:RDS(on)1.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 9.1. Size:163K  infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90R1K2C3

IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a

 9.2. Size:163K  infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90R1K2C3

IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P

Datasheet: IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IRF1407 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 , IPG20N04S4L-07 , IPG20N04S4L-08 , IPG20N04S4L-11 , IPG20N06S2L-35 , IPG20N06S2L-50 .

History: SI4880DY

Keywords - IPD90R1K2C3 MOSFET datasheet

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