IPD90R1K2C3 PDF and Equivalents Search

 

IPD90R1K2C3 PDF Specs and Replacement


   Type Designator: IPD90R1K2C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252
 

 IPD90R1K2C3 substitution

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IPD90R1K2C3 PDF Specs

 ..1. Size:297K  infineon
ipd90r1k2c3.pdf pdf_icon

IPD90R1K2C3

IPD90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252 Ultra low gate charge CoolMOS 900V... See More ⇒

 ..2. Size:243K  inchange semiconductor
ipd90r1k2c3.pdf pdf_icon

IPD90R1K2C3

isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 FEATURES Static drain-source on-resistance RDS(on) 1.2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage... See More ⇒

 9.1. Size:163K  infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90R1K2C3

IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a... See More ⇒

 9.2. Size:163K  infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90R1K2C3

IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P... See More ⇒

Detailed specifications: IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IRFP450 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 , IPG20N04S4L-07 , IPG20N04S4L-08 , IPG20N04S4L-11 , IPG20N06S2L-35 , IPG20N06S2L-50 .

History: AP85T10GP-HF

Keywords - IPD90R1K2C3 MOSFET specs

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