IPD90R1K2C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD90R1K2C3
Маркировка: 9R1K2C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 83 W
Предельно допустимое напряжение сток-исток |Uds|: 900 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 5.1 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 28 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 35 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD90R1K2C3
IPD90R1K2C3 Datasheet (PDF)
ipd90r1k2c3.pdf
IPD90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO252 Ultra low gate chargeCoolMOS 900V
ipd90r1k2c3.pdf
isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3FEATURESStatic drain-source on-resistance:RDS(on)1.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf
IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf
IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P
ipd90p03p4-04 ds 10.pdf
IPD90P03P4-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR 4.5mDS(on)I -90 ADFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO252-3-11 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90P03P4-04 PG-TO252-3-11 4P0304Maxim
ipd900p06nm.pdf
IPD900P06NMMOSFETD-PAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level Enhancement mode1 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDraintabTable 1 Ke
ipd90p03p4l-04 ipd90p03p4l-04 ds 10.pdf
IPD90P03P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR 4.1mDS(on)I -90 ADFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO252-3-11 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Mark
ipd90n04s3-04 ds 1 0.pdf
IPD90N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 3.6mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-04 PG-TO252-3-11 QN0404Max
ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf
IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,
ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf
IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,
ipd90p04p4-05 ds 10.pdf
IPD90P04P4-05OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR 4.7mDS(on)I -90 ADFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO252-3-313 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90P04P4-05 PG-TO252-3-313 4P0405Maxi
ipd90n10s4l-06.pdf
IPD90N10S4L-06OptiMOSTM-T2 Power-TransistorProduct SummaryV 100 VDSR 6.6mWDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualifiedTAB MSL1 up to 260C peak reflow 175C operating temperature13 Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N10S4L-06 PG-TO252-3-313 4N10L06Max
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf
IPD90N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.9mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-07 PG-TO252-3-11
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf
IPD90N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 5.1mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-05 PG-TO252-3-11
ipd90p04p4-05.pdf
IPD90P04P4-05OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) 4.7mWID -90 AFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO252-3-313 MSL1 up to 260C peak reflowTab 175C operating temperature Green package (RoHS compliant)13 100% Avalanche testedSourcepin 3Gatepin 1Type Package Marking Drainpin
ipd90n04s3-h4.pdf
IPD90N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 4.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-H4 PG-TO252-3-11 QN04H4Max
ipd90p04p4l-04.pdf
IPD90P04P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR 4.3mWDS(on)I -90 ADFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO252-3-313 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90P04P4L-04 PG-TO252-3-313 4P04L04Max
ipd90n08s4-05.pdf
IPD90N08S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 80 VRDS(on),max 5.3mWID 90 AFeaturesPG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N08S4-05 PG-TO252-3-313 4N0805Maximum ratings, a
ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf
IPD90N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 3.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N03S4L-03 PG-TO252-3-11 4N03L03
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf
IPD90N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 4.6mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-05 PG-TO252-3-1
ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf
IPD90N04S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4L-04 PG-TO252-3-313 4N04L04Maximum ratin
ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf
IPD90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.4mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-02 PG-TO252-3-313 4N0402Maximum ratings,
ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf
IPD90N03S4L-02OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 2.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD90N03S4L-02
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf
IPD90N06S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.3mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-06 P
ipd90n10s4-06.pdf
IPD90N10S4-06OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max 6.7mWID 90 AFeatures N-channel - Normal Level - Enhancement modePG-TO252-3-313 AEC qualifiedTAB MSL1 up to 260C peak reflow 175C operating temperature13 Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N10S4-06 PG-TO252-3-313 4N100
ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf
IPD90N04S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 86 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-05 PG-TO252-3-313 4N0405Maximum ratings,
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
