APT8018JN Todos los transistores

 

APT8018JN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8018JN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 690 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 40 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 19 nS

Conductancia de drenaje-sustrato (Cd): 1430 pF

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: SOT227

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APT8018JN Datasheet (PDF)

1.1. apt8018jn.pdf Size:60K _apt

APT8018JN
APT8018JN

D G APT8018JN 800V 40A 0.18Ω S "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 8018JN UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 40 Amps IDM, lLM Pulsed D

3.1. apt8018l2vfrg.pdf Size:133K _update_mosfet

APT8018JN
APT8018JN

APT8018L2VFR Ω 800V 43A 0.180Ω Ω Ω Ω L2VFR POWER MOS V® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pa

3.2. apt8018l2vr.pdf Size:77K _apt

APT8018JN
APT8018JN

APT8018L2VR 800V 43A 0.180W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D •

 3.3. apt8018.pdf Size:77K _apt

APT8018JN
APT8018JN

APT8018L2VR 800V 43A 0.180W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D •

3.4. apt8018l2vfr.pdf Size:131K _apt

APT8018JN
APT8018JN

APT8018L2VFR Ω 800V 43A 0.180Ω Ω Ω Ω L2VFR POWER MOS V® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pa

Otros transistores... APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR , APT60M75PVR , APT60M90JN , APT8015JVFR , APT8015JVR , IRFP4229 , APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR , APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR .

 

 
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