APT8018JN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8018JN  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 690 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 1430 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: SOT227

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APT8018JN datasheet

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 apt8018jn.pdf pdf_icon

APT8018JN

D G APT8018JN 800V 40A 0.18 S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 8018JN UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25 C 40 Amps IDM, lLM Pulsed D

 7.1. Size:133K  apt
 apt8018l2vfrg.pdf pdf_icon

APT8018JN

APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa

 7.2. Size:77K  apt
 apt8018l2vr.pdf pdf_icon

APT8018JN

APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche Tested D

 7.3. Size:77K  apt
 apt8018.pdf pdf_icon

APT8018JN

APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche Tested D

MOSTRAR MÁS

Otros transistores... APT6045BVR, APT6045CVR, APT6045SVR, APT60M75JVR, APT60M75PVR, APT60M90JN, APT8015JVFR, APT8015JVR, IRF9640, APT8028JVR, APT802R4KN, APT8030B2VFR, APT8030B2VR, APT8030JN, APT8030JVFR, APT8030JVR, APT8030LVFR