All MOSFET. APT8018JN Datasheet

 

APT8018JN Datasheet and Replacement


   Type Designator: APT8018JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 690 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 468 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SOT227
 

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APT8018JN Datasheet (PDF)

 ..1. Size:60K  apt
 apt8018jn.pdf pdf_icon

APT8018JN

DGAPT8018JN 800V 40A 0.18S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 8018JN UNITVDSS Drain-Source Voltage800 VoltsID Continuous Drain Current @ TC = 25C40AmpsIDM, lLM Pulsed D

 7.1. Size:133K  apt
 apt8018l2vfrg.pdf pdf_icon

APT8018JN

APT8018L2VFR800V 43A 0.180L2VFR POWER MOS V FREDFETTO-264Power MOS V is a new generation of high voltage N-Channel enhancementMaxmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa

 7.2. Size:77K  apt
 apt8018l2vr.pdf pdf_icon

APT8018JN

APT8018L2VR800V 43A 0.180WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

 7.3. Size:77K  apt
 apt8018.pdf pdf_icon

APT8018JN

APT8018L2VR800V 43A 0.180WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

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Datasheet: APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR , APT60M75PVR , APT60M90JN , APT8015JVFR , APT8015JVR , AO4468 , APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR , APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR .

History: NCEP033N85

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