All MOSFET. APT8018JN Datasheet

 

APT8018JN MOSFET. Datasheet pdf. Equivalent

Type Designator: APT8018JN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 690 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 1430 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: SOT227

APT8018JN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT8018JN Datasheet (PDF)

1.1. apt8018jn.pdf Size:60K _apt

APT8018JN
APT8018JN

D G APT8018JN 800V 40A 0.18Ω S "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 8018JN UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 40 Amps IDM, lLM Pulsed D

3.1. apt8018l2vfrg.pdf Size:133K _update_mosfet

APT8018JN
APT8018JN

APT8018L2VFR Ω 800V 43A 0.180Ω Ω Ω Ω L2VFR POWER MOS V® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pa

3.2. apt8018l2vfr.pdf Size:131K _apt

APT8018JN
APT8018JN

APT8018L2VFR Ω 800V 43A 0.180Ω Ω Ω Ω L2VFR POWER MOS V® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pa

 3.3. apt8018l2vr.pdf Size:77K _apt

APT8018JN
APT8018JN

APT8018L2VR 800V 43A 0.180W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D •

3.4. apt8018.pdf Size:77K _apt

APT8018JN
APT8018JN

APT8018L2VR 800V 43A 0.180W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D •

Datasheet: APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR , APT60M75PVR , APT60M90JN , APT8015JVFR , APT8015JVR , IRFP4229 , APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR , APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR .

 

 
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