IPI100N08S2-07 Todos los transistores

 

IPI100N08S2-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI100N08S2-07
   Código: PN0807
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 144 nC
   trⓘ - Tiempo de subida: 51 nS
   Cossⓘ - Capacitancia de salida: 1260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0071 Ohm
   Paquete / Cubierta: TO262
     - Selección de transistores por parámetros

 

IPI100N08S2-07 Datasheet (PDF)

 ..1. Size:158K  infineon
 ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf pdf_icon

IPI100N08S2-07

IPB100N08S2-07IPP100N08S2-07, IPI100N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 5.1. Size:1010K  infineon
 ipp100n08n3g ipi100n08n3g ipb097n08n3g ipp100n08n3 ipi100n08n3 ipb097n08n3.pdf pdf_icon

IPI100N08S2-07

IPP100N08N3 G IPI100N08N3 GIPB097N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 7 DQ H35>5?B=1

 5.2. Size:287K  inchange semiconductor
 ipi100n08n3.pdf pdf_icon

IPI100N08S2-07

isc N-Channel MOSFET Transistor IPI100N08N3FEATURESStatic drain-source on-resistance:RDS(on) 9.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 6.1. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPI100N08S2-07

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

MOSTRAR MÁS

Otros transistores... IPG20N06S2L-35 , IPG20N06S2L-50 , IPG20N06S2L-65 , IPG20N06S4-15 , IPG20N06S4L-11 , IPG20N06S4L-14 , IPG20N06S4L-26 , IPI100N04S3-03 , 10N65 , IPI100N10S3-05 , IPI100P03P3L-04 , IPI120N04S3-02 , IPI120N06S4-03 , IPI22N03S4L-15 , IPI45N06S4-09 , IPI45N06S4L-08 , IPI45P03P4L-11 .

History: ZXMN3F30FH | ME10N15-G | HX5N6 | AO3407G | SFB070N150C3 | STP19N06LFI | NCE55P30K

 

 
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