Справочник MOSFET. IPI100N08S2-07

 

IPI100N08S2-07 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPI100N08S2-07
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 51 ns
   Cossⓘ - Выходная емкость: 1260 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0071 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для IPI100N08S2-07

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPI100N08S2-07 Datasheet (PDF)

 ..1. Size:158K  infineon
 ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf pdf_icon

IPI100N08S2-07

IPB100N08S2-07IPP100N08S2-07, IPI100N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 5.1. Size:1010K  infineon
 ipp100n08n3g ipi100n08n3g ipb097n08n3g ipp100n08n3 ipi100n08n3 ipb097n08n3.pdf pdf_icon

IPI100N08S2-07

IPP100N08N3 G IPI100N08N3 GIPB097N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 7 DQ H35>5?B=1

 5.2. Size:287K  inchange semiconductor
 ipi100n08n3.pdf pdf_icon

IPI100N08S2-07

isc N-Channel MOSFET Transistor IPI100N08N3FEATURESStatic drain-source on-resistance:RDS(on) 9.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 6.1. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPI100N08S2-07

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPG20N06S2L-35 , IPG20N06S2L-50 , IPG20N06S2L-65 , IPG20N06S4-15 , IPG20N06S4L-11 , IPG20N06S4L-14 , IPG20N06S4L-26 , IPI100N04S3-03 , CS150N03A8 , IPI100N10S3-05 , IPI100P03P3L-04 , IPI120N04S3-02 , IPI120N06S4-03 , IPI22N03S4L-15 , IPI45N06S4-09 , IPI45N06S4L-08 , IPI45P03P4L-11 .

History: 2SK962 | JCS650S | GSM4102W | IRF7450PBF | 2SJ537 | VB2703K

 

 
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