IPI100N08S2-07 Specs and Replacement

Type Designator: IPI100N08S2-07

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 1260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm

Package: TO262

IPI100N08S2-07 substitution

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IPI100N08S2-07 datasheet

 ..1. Size:158K  infineon
ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf pdf_icon

IPI100N08S2-07

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 6.8 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 5.1. Size:1010K  infineon
ipp100n08n3g ipi100n08n3g ipb097n08n3g ipp100n08n3 ipi100n08n3 ipb097n08n3.pdf pdf_icon

IPI100N08S2-07

IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I 7 D Q H35>5?B=1... See More ⇒

 5.2. Size:287K  inchange semiconductor
ipi100n08n3.pdf pdf_icon

IPI100N08S2-07

isc N-Channel MOSFET Transistor IPI100N08N3 FEATURES Static drain-source on-resistance RDS(on) 9.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 6.1. Size:159K  infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPI100N08S2-07

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty... See More ⇒

Detailed specifications: IPG20N06S2L-35, IPG20N06S2L-50, IPG20N06S2L-65, IPG20N06S4-15, IPG20N06S4L-11, IPG20N06S4L-14, IPG20N06S4L-26, IPI100N04S3-03, IRF520, IPI100N10S3-05, IPI100P03P3L-04, IPI120N04S3-02, IPI120N06S4-03, IPI22N03S4L-15, IPI45N06S4-09, IPI45N06S4L-08, IPI45P03P4L-11

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