IPI076N12N3G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPI076N12N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI076N12N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 632 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm

Encapsulados: TO262

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IPI076N12N3G datasheet

..1. Size:571K infineon
ipp076n12n3g ipi076n12n3g.pdf pdf_icon

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..2. Size:545K infineon
ipi076n12n3g ipp076n12n3g.pdf pdf_icon

IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 7.6 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

3.1. Size:271K inchange semiconductor
ipi076n12n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI076N12N3 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

6.1. Size:1551K 1
ipi076n15n5.pdf pdf_icon

IPI076N15N5 MOSFET I -PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q rr) 175 C operating temperature Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC1) for target application 2 3 Ideal for high-frequency switch

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IPI076N12N3G Todos los transistores