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IPI076N12N3 G IPP076N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on)max 7.6 mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

isc N-Channel MOSFET Transistor IPI076N12N3FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYM

IPI076N15N5MOSFETI-PAKOptiMOS5 Power-Transistor, 150 VFeatures tab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant1 Qualified according to JEDEC1) for target application23 Ideal for high-frequency switch

isc N-Channel MOSFET Transistor IPI076N15N5FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY