IPI076N12N3G Specs and Replacement

Type Designator: IPI076N12N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 632 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm

Package: TO262

IPI076N12N3G substitution

- MOSFET ⓘ Cross-Reference Search

 

IPI076N12N3G datasheet

 ..1. Size:571K  infineon
 ipp076n12n3g ipi076n12n3g.pdf pdf_icon

IPI076N12N3G

$ " " $$ " " TM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1 D R ( 492??6= ?@C>2= =6G6= 7 m D n)m x R I46==6?E 82E6 492C86 I AC@5F4E !) ' D n) 1 D R /6CJ =@H @? C6D DE2?46 D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 92=@86? 7C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?49C@?@FD C64E... See More ⇒

 ..2. Size:545K  infineon
 ipi076n12n3g ipp076n12n3g.pdf pdf_icon

IPI076N12N3G

IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 7.6 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati... See More ⇒

 3.1. Size:271K  inchange semiconductor
 ipi076n12n3.pdf pdf_icon

IPI076N12N3G

isc N-Channel MOSFET Transistor IPI076N12N3 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

 6.1. Size:1551K  1
 ipi076n15n5.pdf pdf_icon

IPI076N12N3G

IPI076N15N5 MOSFET I -PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q rr) 175 C operating temperature Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC1) for target application 2 3 Ideal for high-frequency switch... See More ⇒

SHOW MORE

Detailed specifications: IPI041N12N3G, IPI045N10N3G, IPI04CN10NG, IPI052NE7N3G, IPI057N08N3G, IPI070N08N3G, IPI072N10N3G, IPI075N15N3G, IRF630, IPI086N10N3G, IPI100N04S4-H2, IPI100N08N3G, IPI110N20N3G, IPI111N15N3G, IPI120N04S4-01, IPI120N04S4-02, IPI120N06S4-02

Keywords - IPI076N12N3G MOSFET specs

 IPI076N12N3G cross reference

 IPI076N12N3G equivalent finder

 IPI076N12N3G pdf lookup

 IPI076N12N3G substitution

 IPI076N12N3G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.