IPI26CN10NG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI26CN10NG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 71 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 232 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO262

 Búsqueda de reemplazo de IPI26CN10NG MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPI26CN10NG datasheet

 ..1. Size:1032K  infineon
ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf pdf_icon

IPI26CN10NG

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM) DS(on) ID 35 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 4.1. Size:707K  infineon
ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf pdf_icon

IPI26CN10NG

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 25 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 35 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 4.2. Size:256K  inchange semiconductor
ipi26cn10n.pdf pdf_icon

IPI26CN10NG

Isc N-Channel MOSFET Transistor IPI26CN10N FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 1

Otros transistores... IPI120N06S4-02, IPI120N06S4-H1, IPI126N10N3G, IPI139N08N3G, IPI147N12N3G, IPI180N10N3G, IPI200N15N3G, IPI200N25N3G, 13N50, IPI320N20N3G, IPI35CN10NG, IPI50CN10NG, IPI50R140CP, IPI50R199CP, IPI50R250CP, IPI50R299CP, IPI50R350CP