All MOSFET. IPI26CN10NG Datasheet

 

IPI26CN10NG Datasheet and Replacement


   Type Designator: IPI26CN10NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO262
 

 IPI26CN10NG substitution

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IPI26CN10NG Datasheet (PDF)

 ..1. Size:1032K  infineon
ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf pdf_icon

IPI26CN10NG

IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM)DS(on)ID 35 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 4.1. Size:707K  infineon
ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf pdf_icon

IPI26CN10NG

IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G IPU25CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 25mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 35 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 4.2. Size:256K  inchange semiconductor
ipi26cn10n.pdf pdf_icon

IPI26CN10NG

Isc N-Channel MOSFET Transistor IPI26CN10NFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1

Datasheet: IPI120N06S4-02 , IPI120N06S4-H1 , IPI126N10N3G , IPI139N08N3G , IPI147N12N3G , IPI180N10N3G , IPI200N15N3G , IPI200N25N3G , TK10A60D , IPI320N20N3G , IPI35CN10NG , IPI50CN10NG , IPI50R140CP , IPI50R199CP , IPI50R250CP , IPI50R299CP , IPI50R350CP .

History: PDS4909

Keywords - IPI26CN10NG MOSFET datasheet

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