IPP057N06N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP057N06N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 115 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm

Encapsulados: TO220

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IPP057N06N3G datasheet

 ..1. Size:689K  infineon
 ipb054n06n3g ipp057n06n3g.pdf pdf_icon

IPP057N06N3G

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 3.1. Size:691K  infineon
 ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf pdf_icon

IPP057N06N3G

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 3.2. Size:246K  inchange semiconductor
 ipp057n06n3.pdf pdf_icon

IPP057N06N3G

isc N-Channel MOSFET Transistor IPP057N06N3 IIPP057N06N3 FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ideal for high frequency switching Optimized technology for DC/DC converters ABSOLUTE M

 6.1. Size:526K  infineon
 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf pdf_icon

IPP057N06N3G

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS complia

MOSTRAR MÁS

Otros transistores... IPP045N10N3G, IPP048N04NG, IPP048N12N3G, IPP04CN10NG, IPP04N03LBG, IPP052N06L3G, IPP052NE7N3G, IPP055N03LG, 5N60, IPP057N08N3G, IPP05CN10LG, IPP05CN10NG, IPP062NE7N3G, IPP065N03LG, IPP065N04NG, IPP065N06LG, IPP06CN10LG