All MOSFET. IPP057N06N3G Datasheet

 

IPP057N06N3G Datasheet and Replacement


   Type Designator: IPP057N06N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220
 

 IPP057N06N3G substitution

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IPP057N06N3G Datasheet (PDF)

 ..1. Size:689K  infineon
 ipb054n06n3g ipp057n06n3g.pdf pdf_icon

IPP057N06N3G

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 3.1. Size:691K  infineon
 ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf pdf_icon

IPP057N06N3G

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 3.2. Size:246K  inchange semiconductor
 ipp057n06n3.pdf pdf_icon

IPP057N06N3G

isc N-Channel MOSFET Transistor IPP057N06N3 IIPP057N06N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONIdeal for high frequency switchingOptimized technology for DC/DC convertersABSOLUTE M

 6.1. Size:526K  infineon
 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf pdf_icon

IPP057N06N3G

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia

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Datasheet: IPP045N10N3G , IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , 13N50 , IPP057N08N3G , IPP05CN10LG , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG .

Keywords - IPP057N06N3G MOSFET datasheet

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