Справочник MOSFET. IPP057N06N3G

 

IPP057N06N3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP057N06N3G
   Маркировка: 057N06N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 115 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 61 nC
   trⓘ - Время нарастания: 68 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP057N06N3G

 

 

IPP057N06N3G Datasheet (PDF)

 ..1. Size:689K  infineon
 ipb054n06n3g ipp057n06n3g.pdf

IPP057N06N3G IPP057N06N3G

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 3.1. Size:691K  infineon
 ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf

IPP057N06N3G IPP057N06N3G

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 3.2. Size:246K  inchange semiconductor
 ipp057n06n3.pdf

IPP057N06N3G IPP057N06N3G

isc N-Channel MOSFET Transistor IPP057N06N3 IIPP057N06N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONIdeal for high frequency switchingOptimized technology for DC/DC convertersABSOLUTE M

 6.1. Size:526K  infineon
 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf

IPP057N06N3G IPP057N06N3G

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia

 6.2. Size:1022K  infineon
 ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf

IPP057N06N3G IPP057N06N3G

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1

 6.3. Size:245K  inchange semiconductor
 ipp057n08n3.pdf

IPP057N06N3G IPP057N06N3G

isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25

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