IPP080N03LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP080N03LG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 47 W
Tensión drenaje-fuente (Vds): 30 V
Corriente continua de drenaje (Id): 50 A
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.008 Ohm
Empaquetado / Estuche: TO220
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IPP080N03LG Datasheet (PDF)
1.1. ipp080n03l rev2.0.pdf 
Size:728K _infineon
Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated
1.2. ipp080n03l.pdf Size:323K _infineon
Type IPP080N03L G IPB080N03L G OptiMOS™3 Power-Transistor Product Summary Features …. V 30 V DS • Fast switching MOSFET for SMPS R 8.0 mΩ DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R
2.1. ipb080n06ng ipp080n06ng rev1.05.pdf Size:739K _infineon
IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Max
Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .
