IPP080N03LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP080N03LG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 47 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 50 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: TO220

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IPP080N03LG Datasheet (PDF)

1.1. ipp080n03l rev2.0.pdf Size:728K _infineon

Type IPP080N03L G IPB080N03L G � 3 Power-Transistor Product Summary Features V 30 V DS � Fast switching MOSFET for SMPS R 8.0 mW DS(on),max � Optimized technology for DC/DC converters I 50 A D � Qualified according to JEDEC1) for target applications � N-channel, logic level � Excellent gate charge x R product (FOM) DS(on) � Very low on-resistance R DS(on) � Avalanche rated �

1.2. ipp080n03l.pdf Size:323K _infineon

Type IPP080N03L G IPB080N03L G OptiMOS™3 Power-Transistor Product Summary Features …. V 30 V DS • Fast switching MOSFET for SMPS R 8.0 mΩ DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R

2.1. ipb080n06ng ipp080n06ng rev1.05.pdf Size:739K _infineon

IPB080N06N G IPP080N06N G � Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Max

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

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