IPP080N03LG Specs and Replacement
Type Designator: IPP080N03LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 580 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
IPP080N03LG substitution
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IPP080N03LG datasheet
ipp080n03l .pdf
Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒
ipp080n03l.pdf
Type IPP080N03L G IPB080N03L G OptiMOS 3 Power-Transistor Product Summary Features . V 30 V DS Fast switching MOSFET for SMPS R 8.0 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R ... See More ⇒
ipp080n03l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP080N03L IIPP080N03L FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Vth =1.0 to 2.2V (VDS = 0 V, ID=250 A) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a ... See More ⇒
Detailed specifications: IPP06CN10LG, IPP06CN10NG, IPP070N06LG, IPP070N06NG, IPP070N08N3G, IPP072N10N3G, IPP075N15N3G, IPP076N12N3G, STP65NF06, IPP080N06NG, IPP084N06L3G, IPP085N06LG, IPP086N10N3G, IPP08CN10LG, IPP08CN10NG, IPP093N06N3G, IPP096N03LG
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