IPP080N06NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP080N06NG Datasheet (PDF)

..1. Size:739K infineon
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IPB080N06N G IPP080N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

6.1. Size:728K infineon
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Type IPP080N03L GIPB080N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 8.0mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

6.2. Size:323K infineon
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Type IPP080N03L GIPB080N03L GOptiMOS3 Power-TransistorProduct SummaryFeatures .V 30 VDS Fast switching MOSFET for SMPSR 8.0mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

6.3. Size:246K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP080N03LIIPP080N03LFEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement mode:Vth =1.0 to 2.2V (VDS = 0 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a

Otros transistores... IPP06CN10NG , IPP070N06LG , IPP070N06NG , IPP070N08N3G , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G , IPP080N03LG , IRF9640 , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 .