IPP080N06NG Todos los transistores

 

IPP080N06NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP080N06NG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 214 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 80 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: TO220

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IPP080N06NG Datasheet (PDF)

1.1. ipb080n06ng ipp080n06ng rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG

IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Max

2.1. ipp080n03l rev2.0.pdf Size:728K _infineon

IPP080N06NG
IPP080N06NG

Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated

2.2. ipp080n03l.pdf Size:323K _infineon

IPP080N06NG
IPP080N06NG

Type IPP080N03L G IPB080N03L G OptiMOS™3 Power-Transistor Product Summary Features …. V 30 V DS • Fast switching MOSFET for SMPS R 8.0 mΩ DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
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