IPP080N06NG MOSFET. Datasheet pdf. Equivalent

IPP080N06NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPP080N06NG Datasheet (PDF)

1.1. ipb080n06ng_ipp080n06ng_rev1.05.pdf Size:739K _infineon

IPB080N06N G IPP080N06N G ™ Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Max

2.1. ipp080n03l_rev2.0.pdf Size:728K _infineon

Type IPP080N03L G IPB080N03L G ™ 3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 8.0 mW DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Avalanche rated •

5.1. ipp08cne8n_rev1.07.pdf Size:772K _infineon

IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G ™ 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5

5.2. ipp08cn10n_rev1.08.pdf Size:750K _infineon

$ " " $ " " $$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D:DE2?46 DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@F

5.3. ipb085n06lg_ipp085n06lg_rev1.05.pdf Size:739K _infineon

IPB085N06L G IPP085N06L G ™ Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( & ! #** ( & ! Type Package Marking #* ( & ! ? O ? O ? ? ? ?

5.4. ipp08cn10l_rev1[1].01.pdf Size:515K _infineon

IPP08CN10L G ® 2 Power-Transistor Product Summary Features V 100 V DS • N-channel, logic level R 8 m? DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 98 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

5.5. ipp084n06l3_ipb084n06l3_rev2.23.pdf Size:683K _infineon

pe IPB081N06L3 G IPP084N06L3 G ™ 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 1 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D R

LIST

Last Update

MOSFET: 2SK2258-01 | 2SK2257-01 | 2SK2252-01S | 2SK2252-01L | 2SK2247 | 2SK2236 | 2SK2235 | 2SK2230 | 2SK2228 | 2SK2225-80-E | 2SK2224-01R | 2SK1928 | 2SK1927 | 2SK1915 | 2SK1913 |