IPP080N06NG Datasheet and Replacement
Type Designator: IPP080N06NG
Marking Code: 080N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 70 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 660 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
IPP080N06NG substitution
IPP080N06NG Datasheet (PDF)
ipb080n06ng ipp080n06ng.pdf

IPB080N06N G IPP080N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1
ipp080n03l .pdf

Type IPP080N03L GIPB080N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 8.0mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
ipp080n03l.pdf

Type IPP080N03L GIPB080N03L GOptiMOS3 Power-TransistorProduct SummaryFeatures .V 30 VDS Fast switching MOSFET for SMPSR 8.0mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R
ipp080n03l.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP080N03LIIPP080N03LFEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement mode:Vth =1.0 to 2.2V (VDS = 0 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a
Datasheet: IPP06CN10NG , IPP070N06LG , IPP070N06NG , IPP070N08N3G , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G , IPP080N03LG , NCEP15T14 , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 .
History: NCEP033N85D | NCE3008Y | SMN09L20D | 2N60G
Keywords - IPP080N06NG MOSFET datasheet
IPP080N06NG cross reference
IPP080N06NG equivalent finder
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IPP080N06NG replacement
History: NCEP033N85D | NCE3008Y | SMN09L20D | 2N60G



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