IPP093N06N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP093N06N3G Datasheet (PDF)

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pe IPB090N06N3 G IPP093N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&),R m , ?> =1G ,& P G35

3.1. Size:295K infineon
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Type IPB090N06N3 G IPP093N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS for sync. rectification, drives and dc/dc SMPSR 9mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 50 AD Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications

3.2. Size:687K infineon
ipp093n06n3 ipb093n06n3.pdf pdf_icon

pe IPB090N06N3 G IPP093N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&),R m , ?> =1G ,& P G35

3.3. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor IPP093N06N3IIPP093N06N3FEATURESStatic drain-source on-resistance:RDS(on) 9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... IPP076N12N3G , IPP080N03LG , IPP080N06NG , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , AON7403 , IPP096N03LG , IPP100N04S4-H2 , IPP100N08N3G , IPP110N06LG , IPP110N20N3G , IPP111N15N3G , IPP114N03LG , IPP114N12N3G .