IPP093N06N3G Datasheet and Replacement
Type Designator: IPP093N06N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
Package: TO220
IPP093N06N3G substitution
IPP093N06N3G Datasheet (PDF)
ipb090n06n3g ipp093n06n3g.pdf

pe IPB090N06N3 G IPP093N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&),R m , ?> =1G ,& P G35
ipb090n06n3 ipp093n06n3.pdf

Type IPB090N06N3 G IPP093N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS for sync. rectification, drives and dc/dc SMPSR 9mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 50 AD Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications
ipp093n06n3 ipb093n06n3.pdf

pe IPB090N06N3 G IPP093N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&),R m , ?> =1G ,& P G35
ipp093n06n3.pdf

isc N-Channel MOSFET Transistor IPP093N06N3IIPP093N06N3FEATURESStatic drain-source on-resistance:RDS(on) 9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IPP076N12N3G , IPP080N03LG , IPP080N06NG , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , MMD60R360PRH , IPP096N03LG , IPP100N04S4-H2 , IPP100N08N3G , IPP110N06LG , IPP110N20N3G , IPP111N15N3G , IPP114N03LG , IPP114N12N3G .
Keywords - IPP093N06N3G MOSFET datasheet
IPP093N06N3G cross reference
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