IPP093N06N3G Specs and Replacement

Type Designator: IPP093N06N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: TO220

IPP093N06N3G substitution

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IPP093N06N3G datasheet

 ..1. Size:687K  infineon
 ipb090n06n3g ipp093n06n3g.pdf pdf_icon

IPP093N06N3G

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35... See More ⇒

 3.1. Size:295K  infineon
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IPP093N06N3G

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 3.2. Size:687K  infineon
 ipp093n06n3 ipb093n06n3.pdf pdf_icon

IPP093N06N3G

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35... See More ⇒

 3.3. Size:245K  inchange semiconductor
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IPP093N06N3G

isc N-Channel MOSFET Transistor IPP093N06N3 IIPP093N06N3 FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

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Detailed specifications: IPP076N12N3G, IPP080N03LG, IPP080N06NG, IPP084N06L3G, IPP085N06LG, IPP086N10N3G, IPP08CN10LG, IPP08CN10NG, IRF9640, IPP096N03LG, IPP100N04S4-H2, IPP100N08N3G, IPP110N06LG, IPP110N20N3G, IPP111N15N3G, IPP114N03LG, IPP114N12N3G

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.