IPP200N25N3G Todos los transistores

 

IPP200N25N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP200N25N3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 297 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO220
 

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IPP200N25N3G datasheet

 ..1. Size:758K  infineon
 ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdf pdf_icon

IPP200N25N3G

 3.1. Size:244K  inchange semiconductor
 ipp200n25n3.pdf pdf_icon

IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N25N3 IIPP200N25N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T

 7.1. Size:993K  infineon
 ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf pdf_icon

IPP200N25N3G

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 20 mW Excellent gate charge x R product (FOM) DS(on) ID 50 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t

 7.2. Size:245K  inchange semiconductor
 ipp200n15n3.pdf pdf_icon

IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high frequency switching and sync. Rec. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

MOSTRAR MÁS

Otros transistores... IPP12CN10NG , IPP139N08N3G , IPP147N03LG , IPP147N12N3G , IPP16CN10LG , IPP16CN10NG , IPP180N10N3G , IPP200N15N3G , IRF1404 , IPP230N06L3G , IPP260N06N3G , IPP26CN10NG , IPP320N20N3G , IPP35CN10NG , IPP50CN10NG , IPP50R140CP , IPP50R199CP .

 

 
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