IPP200N25N3G Todos los transistores

 

IPP200N25N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP200N25N3G

Código: 200N25N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 64 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 64 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 297 pF

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Empaquetado / Estuche: TO220

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IPP200N25N3G Datasheet (PDF)

1.1. ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g.pdf Size:758K _infineon

IPP200N25N3G
IPP200N25N3G

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V • N-channel, normal level RDS(on),max 20 mW • Excellent gate charge x R product (FOM) DS(on) ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application

1.2. ipp200n25n3.pdf Size:244K _inchange_semiconductor

IPP200N25N3G
IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N25N3,IIPP200N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T

 3.1. ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf Size:993K _update-mosfet

IPP200N25N3G
IPP200N25N3G

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 150 V • N-channel, normal level RDS(on),max 20 mW • Excellent gate charge x R product (FOM) DS(on) ID 50 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for t

3.2. ipp200n15n3.pdf Size:245K _inchange_semiconductor

IPP200N25N3G
IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high frequency switching and sync. Rec. ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL

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