All MOSFET. IPP200N25N3G Equivalents Search

 

IPP200N25N3G Spec and Replacement


   Type Designator: IPP200N25N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220

 IPP200N25N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP200N25N3G Specs

 ..1. Size:758K  infineon
 ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdf pdf_icon

IPP200N25N3G

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 3.1. Size:244K  inchange semiconductor
 ipp200n25n3.pdf pdf_icon

IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N25N3 IIPP200N25N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

 7.1. Size:993K  infineon
 ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf pdf_icon

IPP200N25N3G

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 20 mW Excellent gate charge x R product (FOM) DS(on) ID 50 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t... See More ⇒

 7.2. Size:245K  inchange semiconductor
 ipp200n15n3.pdf pdf_icon

IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high frequency switching and sync. Rec. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒

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Detailed specifications: IPP12CN10NG , IPP139N08N3G , IPP147N03LG , IPP147N12N3G , IPP16CN10LG , IPP16CN10NG , IPP180N10N3G , IPP200N15N3G , IRF1404 , IPP230N06L3G , IPP260N06N3G , IPP26CN10NG , IPP320N20N3G , IPP35CN10NG , IPP50CN10NG , IPP50R140CP , IPP50R199CP .

History: TMD8N50Z | H5N2503P | IXFX66N50Q2 | F20N50 | SI4559EY | CEM4201 | F13N50

Keywords - IPP200N25N3G MOSFET specs

 IPP200N25N3G cross reference
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