All MOSFET. IPP200N25N3G Datasheet

 

IPP200N25N3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP200N25N3G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Drain Current |Id|: 64 A

Total Gate Charge (Qg): 64 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO220

IPP200N25N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP200N25N3G Datasheet (PDF)

1.1. ipp200n25n3.pdf Size:244K _inchange_semiconductor

IPP200N25N3G
IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N25N3,IIPP200N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T

3.1. ipp200n15n3.pdf Size:245K _inchange_semiconductor

IPP200N25N3G
IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high frequency switching and sync. Rec. ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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