Справочник MOSFET. IPP200N25N3G

 

IPP200N25N3G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPP200N25N3G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 64 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 297 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для IPP200N25N3G

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPP200N25N3G Datasheet (PDF)

 ..1. Size:758K  infineon
ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdfpdf_icon

IPP200N25N3G

IPB200N25N3 G IPP200N25N3 GIPI200N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 20mW Excellent gate charge x R product (FOM)DS(on)ID 64 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application

 3.1. Size:244K  inchange semiconductor
ipp200n25n3.pdfpdf_icon

IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N25N3IIPP200N25N3FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

 7.1. Size:993K  infineon
ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdfpdf_icon

IPP200N25N3G

IPB200N15N3 G IPD200N15N3 GIPI200N15N3 G IPP200N15N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 20 mW Excellent gate charge x R product (FOM)DS(on)ID 50 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t

 7.2. Size:245K  inchange semiconductor
ipp200n15n3.pdfpdf_icon

IPP200N25N3G

isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high frequency switching and sync. Rec.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

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History: 50N06FI | 2SK2534

 

 
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