IPP200N25N3G - аналоги, параметры транзистора

IPP200N25N3G даташит

..1. Size:758K infineon
ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdf pdf_icon

3.1. Size:244K inchange semiconductor
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isc N-Channel MOSFET Transistor IPP200N25N3 IIPP200N25N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T

7.1. Size:993K infineon
ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf pdf_icon

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 20 mW Excellent gate charge x R product (FOM) DS(on) ID 50 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t

7.2. Size:245K inchange semiconductor
ipp200n15n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high frequency switching and sync. Rec. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

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