IPW50R140CP Todos los transistores

 ..1. Size:656K  infineon
 ipw50r140cp.pdf

IPW50R140CP TM C IMOSTM # A0

 ..2. Size:242K  inchange semiconductor
 ipw50r140cp.pdf

isc N-Channel MOSFET Transistor IPW50R140CP IIPW50R140CP FEATURES Static drain-source on-resistance RDS(on) 0.14 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 7.1. Size:2210K  infineon
 ipa50r190ce ipp50r190ce ipw50r190ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s

 7.2. Size:647K  infineon
 ipw50r199cp.pdf

IPW50R199CP TM C IMOSTM # A0

 7.3. Size:1874K  infineon
 ipw50r190ce ipp50r190ce.pdf

IPW50R190CE, IPP50R190CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co

 7.4. Size:243K  inchange semiconductor
 ipw50r199cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R199CP IIPW50R199CP FEATURES Static drain-source on-resistance RDS(on) 199m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 7.5. Size:242K  inchange semiconductor
 ipw50r190ce.pdf

isc N-Channel MOSFET Transistor IPW50R190CE IIPW50R190CE FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS