IPW50R140CP
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPW50R140CP
Marking Code: 5R140P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 192
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
TO247
IPW50R140CP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPW50R140CP
Datasheet (PDF)
..2. Size:242K inchange semiconductor
ipw50r140cp.pdf 
isc N-Channel MOSFET Transistor IPW50R140CPIIPW50R140CPFEATURESStatic drain-source on-resistance:RDS(on)0.14Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
7.1. Size:2210K infineon
ipa50r190ce ipp50r190ce ipw50r190ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s
7.3. Size:1874K infineon
ipw50r190ce ipp50r190ce.pdf
IPW50R190CE, IPP50R190CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co
7.4. Size:243K inchange semiconductor
ipw50r199cp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R199CPIIPW50R199CPFEATURESStatic drain-source on-resistance:RDS(on)199mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
7.5. Size:242K inchange semiconductor
ipw50r190ce.pdf
isc N-Channel MOSFET Transistor IPW50R190CEIIPW50R190CEFEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
Datasheet: FMM50-025TF
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, GMM3x180-004X2-SMD
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, FDMC0310AS
, GWM100-0085X1-SL
.
