Справочник MOSFET. IPW50R140CP

 

IPW50R140CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPW50R140CP
   Маркировка: 5R140P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 192 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 48 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: TO247

 Аналог (замена) для IPW50R140CP

 

 

IPW50R140CP Datasheet (PDF)

 ..1. Size:656K  infineon
 ipw50r140cp.pdf

IPW50R140CP IPW50R140CP

IPW50R140CPTMCIMOSTM #:A0

 ..2. Size:242K  inchange semiconductor
 ipw50r140cp.pdf

IPW50R140CP IPW50R140CP

isc N-Channel MOSFET Transistor IPW50R140CPIIPW50R140CPFEATURESStatic drain-source on-resistance:RDS(on)0.14Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 7.1. Size:2210K  infineon
 ipa50r190ce ipp50r190ce ipw50r190ce.pdf

IPW50R140CP IPW50R140CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s

 7.2. Size:647K  infineon
 ipw50r199cp.pdf

IPW50R140CP IPW50R140CP

IPW50R199CPTMCIMOSTM #:A0

 7.3. Size:1874K  infineon
 ipw50r190ce ipp50r190ce.pdf

IPW50R140CP IPW50R140CP

IPW50R190CE, IPP50R190CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

 7.4. Size:243K  inchange semiconductor
 ipw50r199cp.pdf

IPW50R140CP IPW50R140CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R199CPIIPW50R199CPFEATURESStatic drain-source on-resistance:RDS(on)199mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 7.5. Size:242K  inchange semiconductor
 ipw50r190ce.pdf

IPW50R140CP IPW50R140CP

isc N-Channel MOSFET Transistor IPW50R190CEIIPW50R190CEFEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS

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History: IXFT88N30P | IRFSZ44

 

 
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